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A novel stochastic simulation approach enables exploration of mechanisms for regulating polarity site movement

Fig 6

Cluster mobility correlates with fast distribution fluctuations and short dwell times of Cdc42T.

Comparison of a “Low mobility” model (from Fig 5C) and a “High mobility” model (from Fig 5G). (A) Patch centroid diffusivities, (B) dwell time of Cdc42T at the cluster, (C) Snapshots of the lateral profile of the concentration of total Cdc42T molecules for the High mobility model and (D) Low mobility model. (E) Coefficient of variation of the distribution of total Cdc42T molecules, CVpatch (see Methods), as a function of the number of total GEF molecules. (F) Patch centroid diffusivity as a function CVpatch for the Low mobility and High mobility models. Error bars for patch centroid diffusivities are standard errors from the least-squared fit used to compute Dpatch. For all other quantities, the error bars are the standard deviation from estimations in 5 independent simulations.

Fig 6

doi: https://doi.org/10.1371/journal.pcbi.1008525.g006