Advertisement
Browse Subject Areas
?

Click through the PLOS taxonomy to find articles in your field.

For more information about PLOS Subject Areas, click here.

  • Loading metrics

Open Access

Correction

Correction: Preparation of High Purity Crystalline Silicon by Electro-Catalytic Reduction of Sodium Hexafluorosilicate with Sodium below 180°C

  • The PLOS ONE Staff

There is an error in the third paragraph of the Introduction and the first equation. The 2 in Na2SiF6 should be subscripted. The correct sentence and the correct first equation are: The well-known Stanford Research Institute International (SRI) reduction process involves that purified silicon tetrafluoride (SiF4) gas through fractional distillation is reduced to silicon by metal sodium above 500°C. SiF4 is from the heat decomposition of sodium hexafluorosilicate (Na2SiF6) at 647°C: (1)

In the Results and Discussion, there is an error in the third equation. The letter “P” was inadvertently added to the second value. Please view the complete, correct equation here:

(3)

These errors were introduced during preparation of this manuscript for publication. The publisher apologizes for these errors.

Reference

  1. 1. Chen Y, Liu Y, Wang X, Li K, Chen P (2014) Preparation of High Purity Crystalline Silicon by Electro-Catalytic Reduction of Sodium Hexafluorosilicate with Sodium below 180°C. PLoS ONE 9(8): e105537. pmid:25153509

Citation: The PLOS ONE Staff (2015) Correction: Preparation of High Purity Crystalline Silicon by Electro-Catalytic Reduction of Sodium Hexafluorosilicate with Sodium below 180°C. PLoS ONE 10(2): e0117875. https://doi.org/10.1371/journal.pone.0117875

Published: February 6, 2015

Copyright: © 2015 The PLOS ONE Staff. This is an open access article distributed under the terms of the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original author and source are credited