Fig 1.
Synchronous bidirectional inverter topology.
Fig 2.
Illustration of Si and SiC MOSFETs used in the proposed bidirectional synchronous H6 inverter.
Fig 3.
Measured forward voltage drops of Si and SiC MOSFET intrinsic diodes, as provided by the manufacturers’ data.
Table 1.
Component choices of the synchronous h6 for frequencies from 20 kHz—50 kHz.
Fig 4.
Illustration of utilised inductors for operation at 20 kHz and 50 kHz.
Fig 5.
Performance of synchronous H6 operated in inverter mode at 20 k Hz: (a) Input voltage and current, (b) SiC switching and inductor current waveforms, (c) Si switching and inductor current waveforms, and at 50 kHz (d) SiC switching current waveform and (e) Si switching current waveforms.
Fig 6.
Performance of synchronous H6 operated in rectifier mode at 20 k Hz: (a) SiC switching and inductor current waveforms, (b) Si switching and inductor current waveforms, and at 50 kHz (c) SiC switching current waveform and (d) Si switching current waveforms.
Fig 7.
Comparison of power loss breakdown between SiC vs. Si MOSFETs in inversion mode operated at 10k, 20k, 30k and 50 kHz at; (a) 1 kW, (b) 2.5 kW, (c) 4 kW and (d) 5 kW.
Fig 8.
Comparison of power loss breakdown between SiC vs. Si MOSFETs in rectification mode operated at 10k, 20k, 30k and 50 kHz at; (a) 1 kW, (b) 2.5 kW, (c) 4 kW and (d) 5 kW.
Fig 9.
Efficiency comparison of SiC MOSFET at (a) inverter mode, (b) rectification mode and Si MOSFET at (c) inversion mode and (d) rectification mode operated at 10k, 20k, 30k & 50k Hz for 5 kW system.
Fig 10.
Efficiency comparison of SiC and Si MOSFET at (a) inverter mode, (b) rectifier mode operated at 20k Hz 50k Hz for a simulated 1 kW system.
Fig 11.
A hardware prototype test-bed setup of a 1 kW synchronous H6 inverter.
Table 2.
Component choices of the synchronous H6 for frequencies from 20 kHz and 50 kHz.
Fig 12.
Synchronous H6 at inverter and rectifier modes (a) pulses of the PWM waveforms and (b) pluses of an expanded PWM waveforms.
Fig 13.
Switching pluses under 20kHz for used SiC and Si MOSFETs: (a) full switching pulses S1-S8, (b) expanded switching pluses S1-S8, (c) detailed switching pluses for S5&S7 and S2&S3 and (d) detailed switching pluses for S6&S8 and S1&S4.
Fig 14.
Switching pluses under 50kHz for used SiC and Si MOSFETs (a) full switching pulses S1-S8, (b) expanded switching pluses S1-S8, (c) detailed switching pluses for S5&S7and S2&S3 and (d) detailed switching pluses for S6&S8and S1&S4.
Fig 15.
Measurement waveforms of synchronous H6 at inverter mode at 20kHz (a) output voltage and current, (b) differential mode (DM) voltage using SiC MOSFETs, (c) output voltage and current and (d) DM voltage using Si MOSFETs.
Fig 16.
Switching pluses under 20kHz for used SiC and Si MOSFETs (a) full switching pulses S1-S8, (b) expanded switching pluses S1-S8, (c) detailed switching pluses for S5&S7and S2&S3 and (d) detailed switching pluses for S6&S8and S1&S4.
Fig 17.
Efficiency curves of bidirectional synchronous H6 inverter at (a) inverter and (b) rectifier modes.