Scheme 1.
The chemical structure of (a) MgPc and (b) Ch-diisoQ compounds.
Scheme 2.
The experimental setup for the preparation of investigated films.
Fig 1.
FTIR spectra of MgPc-Ch-diisoQ powder and film.
Fig 2.
The SEM images of (a)MgPc, (b)Ch-diisoQ, and (c)MgPc-Ch-diisoQ thin films.
Fig 3.
XRD pattern of (a) FTO, (b) MgPc, (c) Ch-diisoQ, and (d)MgPc-Ch-diisoQ films.
Fig 4.
Absorbance spectra of (a) MgPc, (b) Ch-diisoQ, and (c) MgPc-Ch-diisoQ films.
Fig 5.
Relation between (αhν)2 and hν for (a) MgPc, (b) Ch-diisoQ, and (c) MgPc-Ch-diisoQ films.
Fig 6.
Variation of capacitance with voltage for FTO/MgPc/Al, FTO/Ch-diisoQ/Al, and FTO/MgPc-Ch-diisoQ/Al cells.
Table 1.
Diode parameters of the three examined thin films extracted from dark C-V and I-V characteristics.
Fig 7.
Variation of 1/C2 with V for (a) FTO/MgPc/Al, (b) FTO/Ch-diisoQ/Al, and (c) FTO/MgPc-Ch-diisoQ/Al cells.
Fig 8.
The dark J-V characteristics for FTO/MgPc/Al, FTO/Ch-diisoQ/Al, and FTO/MgPc-Ch-diisoQ/Al cells.
Fig 9.
Double logarithmic scale of J-V characteristics for FTO/MgPc/Al, FTO/Ch-diisoQ/Al, and FTO/MgPc-Ch-diisoQ/Al cells.
Fig 10.
J-V characteristics (dark and light conditions) for (a) FTO/MgPc/Al, (b) FTO/Ch-diisoQ/Al, and (c) FTO/MgPc-Ch-diisoQ/Al cells.
Fig 11.
Load curves for FTO/MgPc/Al, FTO/Ch-diisoQ/Al, and FTO/MgPc-Ch-diisoQ/Al cells.
Fig 12.
Power curves for FTO/MgPc/Al, FTO/Ch-diisoQ/Al, and FTO/MgPc-Ch-diisoQ/Al cells.
Table 2.
Photovoltage parameters of MgPc, Ch-diisoQ, and MgPc/ Ch-diisoQ films.