Fig 1.
A simple model of HMM, hidden states, and observable states are shown with circles and squares, respectively.
Transition probabilities are shown with dashed lines and emission probabilities are shown with solid lines.
Fig 2.
The proposed structure of HMM for generating the optimum parameters of PA.
Fig 3.
Schematics of the proposed PA.
Fig 4.
The I-V curve of the transistor, Q is the DC bias point.
Fig 5.
The stability factor of the optimized PA.
Fig 6.
The fabricated power amplifier.
Fig 7.
S-parameters versus frequency.
Fig 8.
Simulated and measured Gain, Pout, and PAE versus frequency at Pin of 24 dBm.
Fig 9.
Simulated and measured Gain, Pout, and PAE versus input power at the frequency of 2.2 GHz.
Fig 10.
Drain voltage and drain current waveforms of the proposed PA versus Pin at the frequency of 2.2 GHz, Pin is swept from 0 dBm to 30 dBm.
Fig 11.
The input and output third-order intercept (TOI) of the proposed PA versus frequency.
Fig 12.
Gain, Pout, and PAE versus frequency at Pin of 24 dBm for PA optimized by ADS_Optimizer and HMM_Optimizer.
Fig 13.
Gain, Pout, and PAE versus input power at the frequency of 2.2 GHz for PA optimized by ADS_Optimizer and HMM_Optimizer.
Table 1.
A brief comparison between HMM optimizer and ADS optimizer for results obtained by swept of frequency (GHz).
Table 2.
A brief comparison between HMM optimizer and ADS optimizer for results obtained by swept of input power (dBm).
Table 3.
Comparison of the proposed PA with some other proposed S-band PAs.