Fig 1.
(a) Top view of NBRFET, (b) cross view of NBRFET along cutting line A in Fig 1(a), (c) cross view of NBRFET along cutting line B in Fig 1(a), (d) top view of along cutting line A in Fig 1(b).
Fig 2.
(a) a top view of step1 of fabrication flow, (b) cross view of Fig 2(a) along cutline A, (c) cross view of Fig 2(a) along cutline B, (d) top view of step 2 of fabrication flow, (e) cross view of Fig 2(d) along cutline A, (f) cross view of Fig 2(d) along cutline B, (g) top view of step 3 of fabrication flow, (h) cross view of Fig 2(g) along cutline A, (i) cross view of Fig 2(g) along cutline B, (j) cross view of Fig 2(g) along cutline C, (k) top view of step 4 of fabrication flow, (l) cross view of Fig 2(k) along cutline A, (m) cross view of Fig 2(k) along cutline B.
Fig 3.
(a) the dependence between the charge stored in the floating gate near the source or the floating gate near the drain (QSFG or QDFG) and the programming time under different gate voltage VGs. (b) the dependence between the charge stored in the floating gate near the source or the floating gate near the drain with an initial QSFG / QDFG and the erasing time under different VGs. (c) the dependence between the charge stored in the floating gate near the source or the floating gate near the drain with an initial QSFG / QDFG and the erasing time under a low VG equals 1V with different tox1 and tox2s.
Fig 4.
(a) the relationship between the effective voltage of S/D floating gates (VSFG and VDFG) and VG, and (b) the relationship between the drain to source current IDS and gate voltage VG with different charge stored in the S/D floating gates.
Fig 5.
(a) The transfer characteristics comparison between the proposed NBRFET and conventional BRFET with similar geometrical scales. (b) The leakage current comparison between the proposed NBRFET and conventional BRFET with different drain voltage VDs.
Fig 6.
(a) the comparison of electron concentration distribution between NBRFET and BRFET with positively biased gate electrode and positively charged floating gates (b) the comparison of the electron concentration distribution between NBRFET and BRFET with negatively biased gate electrode and positively charged floating gates. (c) the comparison of hole concentration distribution between NBRFET and BRFET with negatively biased gate electrode and positively charged floating gates.
Fig 7.
(a) the comparison of conduction band energy distribution between the proposed NBRFET and conventional BRFET in forwardly biased state. (b) The comparison of conduction band energy distribution between the proposed NBRFET and conventional BRFET in reversely biased state.
Fig 8.
(a) The output characteristics between IDS and VD. (b) The reconfigurable characteristics of the proposed NBRFET.
Fig 9.
(a) the IDS-VG dependence of NBRFET with different Lsis. (b) The dependence between subthreshold swing and Lsi of NBRFET.
Fig 10.
The IDS-VG dependence of NBRFET with different LCGs and Lsis.