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Fig 1.

Schematic of the sample surface treatments and spectral data acquisition.

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Fig 1 Expand

Fig 2.

PL emission spectra emitted by the 5 × 5 × 2 mm3 Ce:GAGG single-crystal samples under the 325 nm He–Cd laser excitation: (a, black) as-cut, (b, blue) mechanically polished, (c)–(h) chemically polished for ((c, neon green), (d, orange), (e, magenta), (f, red), (g, green), (h, violet)), for 10, 20, 30, 60, 90, and 120 min.

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Fig 2 Expand

Table 1.

EDS analysis results of the Ce:GAGG crystal samples after different surface treatments.

Each value denotes an average value obtained from measurements over five different spots on the samples.

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Table 1 Expand

Fig 3.

XRD spectra of the Ce:GAGG samples after different surface treatments, showing peaks at: (a) ~ 32.5° and (b) ~ 60.4°.

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Fig 3 Expand

Fig 4.

SEM images of the 5 × 5 × 2 mm3 Ce:GAGG single crystals: (a) as-cut, (b) mechanically polished, and (c)–(f) chemically polished for 10, 30, 60, and 120 min.

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Fig 4 Expand

Fig 5.

Surface roughness measurements of the 5 × 5 mm2 Ce:GAGG face: (a) as-cut (black), (b) mechanically polished (blue), (c) chemically polished for 10 min (green), and (d) chemically polished for 60 min (red).

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Fig 5 Expand

Table 2.

Comparison of the surface roughness and waviness values obtained after the different surface treatments.

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Table 2 Expand

Table 3.

Relative light output and energy resolution of the 5 × 5 × 2 mm3 Ce:GAGG single crystals before and after the different surface treatments.

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Table 3 Expand

Fig 6.

Example of pulse height spectra of a 5 × 5 × 2 mm3 Ce:GAGG single-crystal sample, coupled to a PMT, before and after chemical polishing: (a) as-cut and (b) chemically polished for 60 min. A 137Cs radioactive source was used to obtain the pulse height spectra.

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Fig 6 Expand

Fig 7.

Relative light output compared to itself (as-cut) after chemical polishing for 30, 60, 90, and 120 min for various Ce:GAGG crystal thicknesses.

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Fig 7 Expand