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Fig 1.

The framework to study the effect of the shield on the surge voltage distribution.

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Fig 1 Expand

Fig 2.

(A) Standard switching impulse generator circuit; (B) standard switching impulse voltage waveform (250/2500 μs).

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Fig 2 Expand

Table 1.

Impulse generator circuit specification for standard switching impulse.

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Table 1 Expand

Fig 3.

(A) Oscillating switching impulse generator circuit; (B) oscillating switching impulse waveform (50/1000 μs).

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Fig 3 Expand

Table 2.

Impulse generator circuit specification for oscillating switching impulse.

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Table 2 Expand

Fig 4.

Front cross-sectional view of the winding for a single phase of the 33/11 kV transformer.

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Fig 4 Expand

Table 3.

HV winding geometry specification of the 33/11 kV transformer.

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Table 3 Expand

Table 4.

LV winding geometry specification of the 33/11 kV transformer.

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Table 4 Expand

Fig 5.

(A) Transformer equivalent circuit with 96 discs of HV layers in the winding and 25 layers of LV winding; (B) schematic diagram of 96 discs of the HV winding in the subsystem; (C) schematic diagram from layer 1 to layer 25 of LV winding in the subsystem for the 33/11 kV transformer.

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Fig 5 Expand

Table 5.

RLC parameters of the HV winding for the 33/11 kV transformer.

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Table 5 Expand

Fig 6.

Transformer winding model with different cases of shield placement.

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Fig 6 Expand

Table 6.

Existing and updated RLC parameters of HV winding with shield placement for the 33/11 kV transformer.

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Table 6 Expand

Fig 7.

Transient voltage for unshielded winding under SSI.

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Fig 7 Expand

Fig 8.

Transient voltage for shield placement as conductor 7 in HV winding under SSI.

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Fig 8 Expand

Fig 9.

Transient voltage for shield placement between conductor 1 and 2 of HV winding under SSI.

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Fig 9 Expand

Fig 10.

Transient voltage for shield placement between HV and LV windings under SSI.

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Fig 10 Expand

Fig 11.

Transient voltage for unshielded winding under OSI.

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Fig 11 Expand

Fig 12.

Transient voltage for shield placement as conductor 7 under OSI.

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Fig 12 Expand

Fig 13.

Transient voltage for shield placement between conductor 1 and 2 under OSI.

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Fig 13 Expand

Fig 14.

Transient voltage for shield placement between HV and LV windings under OSI.

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Fig 14 Expand

Fig 15.

The effect of shield on initial voltage distribution under SSI.

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Fig 15 Expand

Fig 16.

The effect of shield on initial voltage distribution under OSI.

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Fig 16 Expand

Table 7.

SEb under SSI.

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Table 7 Expand