Fig 1.
(a) Surface morphology the IZO film; (b) EDS spectrum of the IZO film.
Fig 2.
Transmittance of (a) the blank glass, undoped ZnO film (W1) and IZO films W2, W3; (b) IZO films W4 –W7; (c) IZO films W8 –W10.
Table 1.
Variation of optical band gaps with carrier concentrations of IZO films.
(Note that W1 is the undoped ZnO film).
Fig 3.
The optical band gap shift of the W3 –W10 films as a function of carrier concentration.
Fig 4.
Comparison of the Burstein-Moss shift as a function of carrier concentration obtained by experiment as well as by theoretical calculation.
Fig 5.
XRD 2-theta spectra of (a) (i) W7 (ii) W8 (iii) W9 (iv) W10; (b) (i) W1 (ii) W2 (iii) W3 (iv) W4 (v) W5 (vi) W6.
Table 2.
ZnO (002) peak positions with the FWHM values of W1- W10.
Fig 6.
Variation of the c-lattice constant with carrier concentration.
Fig 7.
XPS spectra of the (a) In 3d5/2 peak (b) O 1s peak.
Fig 8.
XPS depth profiling spectrum of IZO film on Si substrate.
Fig 9.
The Zn 2p3/2 peak of (a) W10 (b) W7.
Fig 10.
Raman spectra of (i) Si substrate (ii) undoped ZnO (iii) W7 (iv) W8; (v) W9 (vi) W10.
The peak at 274 cm-1 attributed to lattice defect due to In incorporation is indicated with an asterisk.
Fig 11.
Comparison of changes in resistivity, optical band gap and stress with carrier concentration.
Fig 12.
Comparison of the mean-free path of the carrier and crystallite size of the IZO films with carrier concentration.