Figure 1.
Schematic configuration of the ESD setup.
Figure 2.
SEM image of the MoO3 thin film fabricated by the spin-coating process.
The concentration of MoO3 aqueous solution was 0.05 wt%.
Figure 3.
SEM images of MoO3 thin films fabricated by the ESD process.
Additive solvents (20 vol%) were (a) acetone, (b) acetonitrile, (c) DMF, and (d) DMSO.
Figure 4.
AFM images of MoO3 thin films fabricated by the ESD process.
Additive solvents (20 vol%) were (a) acetone, (b) acetonitrile, (c) DMF, and (d) DMSO.
Figure 5.
Current-density-voltage characteristics of OPVs with MoO3 layers fabricated using different additive solvents.
Table 1.
PCE, FF, Jsc, and Voc of OPVs fabricated using different additive solvents.
Figure 6.
SEM images of MoO3 thin films fabricated with different concentrations of acetone.
Concentrations ranged as (a) 0, (b) 20, (c) 30, (d) 40, and (e) 50 vol%.
Figure 7.
AFM images of MoO3 thin films fabricated using different concentrations of acetone.
Concentrations were (a) 0, (b) 20, (c) 30, (d) 40, and (e) 50 vol%.
Figure 8.
Current-density-voltage characteristics of OPVs incorporating MoO3 layer fabricated using different concentrations of acetone.
Figure 9.
OPV characteristics as a function of acetone concentration.