Figure 1.
Isometric view of simulated DGJLT.
Table 1.
Simulated devices parameters.
Figure 2.
Transfer characteristics simulations of DGJLT with 100 µm width and thickness, nanowire length of 4.2μm, and channel length of 200 nm.
Figure 3.
Transfer characteristics simulations of DGJLTs with three different thickness (20, 40, 100 nm).
The inset plots the on (VG = 0 V) and off (VG = 2.0 V) current variation with thickness, at VD = −1.0 V.
Figure 4.
Variation of transconductance (gm) (a), plot of the ratio of the drain current to the square root of the transconductance (ID/gm0.5) (b) and gm/ID versus gate voltage (c) for three different thicknesses (20, 40, and 100 nm) in saturation (VD = −1.0 V).
Figure 5.
Hole density as a function of position along a horizontal cut line (a) and hole density along a vertical cut at y = 0 (b), for devices with different thicknesses of 20, 40, 100 nm. VD = −1.0 V, VG = +2 V.
Figure 6.
Electric field as a function of position along a horizontal cut line (a) and Electric field along a vertical cut at y = 0 (b), for devices with different thicknesses of 20, 40, 100 nm. VD = −1.0 V, VG = +2 V.
Figure 7.
Transfer characteristics (ID–VG) (a) and drain conductance as a function of drain voltage (b), for different zones XI/XIII length at VG = 0.5 V.
Zones XI and XIII have the length of 500, 1000, and 2000 nm. The length of zone XII is constant at 200 nm.
Figure 8.
Total resistance versus zone XI/XIII length for two different gate voltages of 0.0 and 0.5 V, in the saturation region.
Figure 9.
Electric field along the horizontal cut line for different zones XI and XIII lengths, VD = −1.0 V, VG = +2 V.
Figure 10.
Simulated hole density as a function of position along a cut at Z = 50 nm (a) and hole density as a function of position along a horizontal cut line (b), for different zones XI and XIII lengths at VD = −1.0 V and VG = +2 V.
Table 2.
Dependency of the devices' characteristics to the scaling of thickness and zones XI/XIII length.