Table 1.
Summary of experimental matrix.
Table 2.
IMC Diffusion Kinetics of Au and Cu wires used in 110 nm device.
Figure 1.
Wire constructions of Pd-coated Cu and Pd-doped Cu wires used in 110 nm device.
TOF-SIM results show more homogenous Palladium distribution in Pd-doped Cu wire compared to Pd-coated Cu wire in Free Air Ball Formation (FAB).
Figure 2.
IMC thickness against aging time plotting of three wire types used in 110 nm device FBGA 64 package.
Figure 3.
Post stresses ball shear strengths (g) of Au, Pd-coated Cu and Pd-doped Cu wires.
Figure 4.
Post stresses wire pull strengths (g) of Au, Pd-coated Cu and Pd-doped Cu wires.
Figure 5.
Distribution analysis of ball shear and wire pull data.
Table 3.
Ball Shear Strength Summary.
Table 4.
Wire pull strength summary.
Figure 6.
Biased HAST weibull-fitted wearout reliability plot.
Figure 7.
TC weibull-fitted wearout reliability plot.
Table 5.
Wearout Reliability of biased HAST and TC for Three Ball Bonds.