Table 1.
The outline of the scan parameters for the AFM scanning.
Figure 1.
Schematic steps of Fabrication by AFM-LAO nanolithography.
Table 2.
Steps of the modified RCA method used in the preparation process.
Figure 2.
AFM images showing the effect of improper cleaning parameters on the SOI surface (a) long time interval (25 min), and (b) high temperature (>100
°C).
Figure 3.
The effect of HF concentration on native oxide removal during the sample preparation.
Figure 4.
AFM images of the SOI substrate (a) before and b) after optimized RCA.
Figure 5.
Schematic of AFM – LAO process on SOI substrate.
Table 3.
Various AFM local anodic oxidation models.
Table 4.
LAO Parameter comparison for Au and Cr/Pt coated AFM tip.
Figure 6.
AFM profile image for width comparison of the oxide track for different writing speeds during LAO (Au coated tip at 8V applied voltage).
Table 5.
Oxide thickness for different AFM tips (RH 68%, T = 23°C).
Figure 7.
Relation of the oxide thickness (nm) with a) RH %, and b) applied voltage (68% of the RH%), for different AFM tips and the writing speed of 0.6 µm/s.
Figure 8.
AFM images of the LAO patterned sample with the optimized parameter (Cr/Pt tip).
Figure 9.
a) AFM image of the pattern after LAO in high RH% with shadow effect, b) profile view of the same sample showing the oxide and shadow thickness.
Figure 10.
AFM images of the Si surface etched with KOH: (a) 10%wt (b) 20%wt (c) 30%wt, and SEM images of Si surface etched with 30%wt.
KOH +10%vol IPA at : d) 50°C (e) 60°C, (f) 80°C.
Figure 11.
SEM image of the structure after etching with 30%wt.
KOH +10%vol. IPA at 63°C for 35 s.
Figure 12.
AFM profile images of the structure after etching for different immersing time, a) 8 s, b) 15 s, (c) 22 s (the solution of 30%wt.
KOH +10% IPA at 63°C).
Figure 13.
a) and b) AFM images of the structure after the optimized etching process.
Figure 14.
Shadow effect in the fabrication process on the SOI sample (a) after LAO, (b) after etching for the same sample.