Figure 1.
In situ RHEED patterns during the growth process of a Ge/Si heterostructure.
(A) RHEED pattern of deoxidized Si substrate before growth, (B) RHEED pattern of the Ge epitaxial film grown at 200°C, (C) RHEED pattern of the Ge epitaxial film grown at 500°C.
Figure 2.
HRTEM image and strain field of the Ge/Si heterostructure.
(A) HRTEM image and FFT pattern (inset) of a Ge/Si heterostructure, (B) Burgers circuit around the 90° full-edge dislocation, (C) Burgers circuit around the 60° dislocation, (D) 3× numerical Moiré pattern of a () plane, (E) 3× numerical Moiré image of (111) planes, (F) the strain field of Figure 2(A) calculated by using GPA.
Figure 3.
Experimental and theoretical strain fields around the edge component of a 60° dislocation core.
(A) experimental strain field, (B) strain field by P–N model, (C)–(J) strain fields by Foreman model with a = 1.2, 1.4, 1.5, 1.6, 1.7, 2.0, 3.0, and 5.0, respectively.
Table 1.
Calculated F for the experiment and Foreman model with different values of a.