A highly sensitive vertical plug-in source drain high Schottky barrier bilateral gate controlled bidirectional tunnel field effect transistor
Fig 5
The total current density distribution in the vertical channel under the control of main gate in on state between (a) the proposed VPISDC-HSB-BRFET with 1000nm HV and (b) the proposed VPISDC-HSB-BRFET with 50nm HV.