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Designing process and analysis of a new SOI-MESFET structure with enhanced DC and RF characteristics for high-frequency and high-power applications
- Ahmad Ghiasi,
- Lewis Nkenyereye,
- Fawwaz Hazzazi,
- Muhammad Akmal Chaudhary,
- Maher Assaad,
- Abbas Rezaei
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- Published: April 26, 2024
- https://doi.org/10.1371/journal.pone.0301980