Defect-selective-etched porous GaN as a buffer layer for high efficiency InGaN/GaN light-emitting diodes

• Ah Hyun Park,

  Roles Conceptualization, Data curation, Investigation, Methodology, Writing – original draft

  Affiliation R&D Center, Marine Equipment Technology Solutions, Busan, Republic of Korea

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• Seungjae Baek,

  Roles Formal analysis, Writing – review & editing

  Affiliation Maritime ICT R&D Center, Korea Institute of Ocean Science and Technology, Busan, Republic of Korea

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• Young Won Kim,

  Roles Formal analysis

  Affiliation Green Energy & Nano Technology R&D Group, Korea Institute of Industrial Technology, Gwangju, Republic of Korea

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• S. Chandramohan,

  Roles Validation, Writing – review & editing

  Affiliations Department of Physics and Nanotechnology, SRM Institute of Science and Technology, Kattankulathur, Tamil Nadu, India, School of Semiconductor and Chemical Engineering, Semiconductor Physics Research Center, Jeonbuk National University, Jeonju, Republic of Korea

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• Eun-Kyung Suh ,

  Roles Methodology, Supervision, Writing – review & editing

  * E-mail: thseo@kitech.re.kr (THS); eksuh@jbnu.ac.kr (EKS)

  Affiliation School of Semiconductor and Chemical Engineering, Semiconductor Physics Research Center, Jeonbuk National University, Jeonju, Republic of Korea

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• Tae Hoon Seo

  Roles Conceptualization, Project administration, Supervision, Writing – review & editing

  * E-mail: thseo@kitech.re.kr (THS); eksuh@jbnu.ac.kr (EKS)

  Affiliation Green Energy & Nano Technology R&D Group, Korea Institute of Industrial Technology, Gwangju, Republic of Korea

  https://orcid.org/0000-0002-9896-6406

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