Low-energy Ar⁺ and N⁺ ion beam induced chemical vapor deposition using hexamethyldisilazane for the formation of nitrogen containing SiC and carbon containing SiN films

• Satoru Yoshimura ,

  Roles Conceptualization, Project administration, Writing – original draft

  * E-mail: yosimura@ppl.eng.osaka-u.ac.jp

  Affiliation Center for Atomic and Molecular Technologies, Graduate School of Engineering, Osaka University, Suita, Osaka, Japan

  https://orcid.org/0000-0003-0614-6433

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• Satoshi Sugimoto,

  Roles Investigation

  Affiliation Center for Atomic and Molecular Technologies, Graduate School of Engineering, Osaka University, Suita, Osaka, Japan

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• Takae Takeuchi,

  Roles Methodology

  Affiliation Department of Chemistry, Biology and Environmental Science, Faculty of Science, Nara Women’s University, Nara, Nara, Japan

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• Kensuke Murai,

  Roles Investigation

  Affiliation National Institute of Advanced Industrial Science and Technology (AIST), Ikeda, Osaka, Japan

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• Masato Kiuchi

  Roles Methodology

  Affiliation Center for Atomic and Molecular Technologies, Graduate School of Engineering, Osaka University, Suita, Osaka, Japan

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