The Current Collapse in AlGaN/GaN High-Electron Mobility Transistors Can Originate from the Energy Relaxation of Channel Electrons?

Open Access

Peer-reviewed

Research Article

Ling-Feng Mao ,

* E-mail: mail_lingfeng@aliyun.com

Affiliation School of Computer & Communication Engineering, University of Science & Technology Beijing, 30 Xueyuan Road, Haidian District, Beijing 100083, P. R. China
⨯
Huan-Sheng Ning,

Affiliation School of Computer & Communication Engineering, University of Science & Technology Beijing, 30 Xueyuan Road, Haidian District, Beijing 100083, P. R. China
⨯
Jin-Yan Wang

Affiliation Institute of Microelectronics, Peking University, 100871, Beijing, P. R. China
⨯

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