Gate Length Variation Effect on Performance of Gate-First Self-Aligned In0.53Ga0.47As MOSFET

Open Access

Peer-reviewed

Research Article

Gate Length Variation Effect on Performance of Gate-First Self-Aligned In_0.53Ga_0.47As MOSFET

Mohd F. Mohd Razip Wee,

Affiliations Institute of Electronics, Microelectronics and Nanotechnology (IEMN), University Lille 1, Villeneuve d'Ascq, France, Institute of Microengineering and Nanoelectronics (IMEN), Universiti Kebangsaan Malaysia, Bangi, Selangor, Malaysia
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Arash Dehzangi ,

* E-mail: arashd53@hotmail.com

Affiliation Institute of Microengineering and Nanoelectronics (IMEN), Universiti Kebangsaan Malaysia, Bangi, Selangor, Malaysia
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Sylvain Bollaert,

Affiliation Institute of Electronics, Microelectronics and Nanotechnology (IEMN), University Lille 1, Villeneuve d'Ascq, France
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Nicolas Wichmann,

Affiliation Institute of Electronics, Microelectronics and Nanotechnology (IEMN), University Lille 1, Villeneuve d'Ascq, France
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Burhanuddin Y. Majlis

Affiliation Institute of Microengineering and Nanoelectronics (IMEN), Universiti Kebangsaan Malaysia, Bangi, Selangor, Malaysia
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Dielectrics
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Semiconductors
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Manufacturing processes
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Medical devices and equipment
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Capacitance
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Extrapolation
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Heat treatment
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Chemical deposition
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