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A machine learning approach to model the impact of line edge roughness on gate-all-around nanowire FETs while reducing the carbon footprint
García-Loureiro A,
Seoane N,
Fernández JG,
Comesaña E,
Pichel JC
(2023)
A machine learning approach to model the impact of line edge roughness on gate-all-around nanowire FETs while reducing the carbon footprint.
PLOS ONE 18(7): e0288964.
https://doi.org/10.1371/journal.pone.0288964