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AHaH Computing–From Metastable Switches to Attractors to Machine Learning

Figure 8

Generalized memristive device model simulations.

A) Solid line represents the model simulated at 100 Hz and dots represent the measurements from a physical Ag-chalcogenide device from Boise State University. Physical and predicted device current resulted from driving a sinusoidal voltage of 0.25 V amplitude at 100 Hz across the device. B) Simulation of two series-connected arbitrary devices with differing model parameter values. C) Simulated response to pulse trains of {10 μs, 0.2 V, −0.5 V}, {10 μs, 0.8 V, −2.0 V}, and {5 μs, 0.8 V, −2.0 V} showing the incremental change in resistance in response to small voltage pulses. D) Simulated time response of model from driving a sinusoidal voltage of 0.25 V amplitude at 100 Hz, 150 Hz, and 200 Hz. E) Simulated response to a triangle wave of 0.1 V amplitude at 100 Hz showing the expected incremental behavior of the model. F) Simulated and scaled hysteresis curves for the AIST, GST, and WOx devices (not to scale).

Figure 8